GaN LED S

GaN LED S-13CBAUP ◆Applications：

◆Product characters：

●Display

●Super high brightness with long life. ●All the chips are 100% tested and sorted. ●High uniformity with wavelength and brightness.

◆Mechanical Specification： Dimension ●Chip size：13milx9mil(315±38μm×215±38μm) ●Thickness：4.0mil (100 ± 15μm) ●P bonding pad：3.2mil (80 ± 10μm) ●N bonding pad：3.2mil (80 ± 10μm)

Metallization ●Topside P electrode:Au ●Topside N electrode:Au

◆Electro-optical Characteristics at 22℃： Parameter

Symbol

Condition

Min

Vf1

If =20mA

2.8

Vf4

If =1μA

1.8

Reverse current

Ir

Vr=-10V

Dominant wavelength

λd

If =20mA

Spectral half-width

∆λ

If =20mA

Typ

Max

Unit

3.4

V

Forward voltage

J1 Radiant flux

IV

J2

If =20mA

K1

462.5

2.6

V

1

μA

472.5

nm

24

nm

200

220

220

240

240

270

Mcd

Note： ●GaN LED chip is an electrostatic sensitive device,so ESD protection during chip handling is recommended. ●The wavelength span is 2.5nm，the dominant wavelength maintains a tolerance of ±1.0nm. ●All measurements are done with San’an electro-optical testing equipment. ●Radiant flux measurement allows a tolerance of±10%. ●Customer’s special requirments are also welcome.

E2

GaN LED S S-13CBAUP ◆ ◆Absolu ute Maxiimum Ra atings： Parameter

Symbol

Condition

Rating

Unit

Forw ward DC currrent

If

Tc = 22℃

≤30

mA

Junction temperature

Tj

----

≤115

˚C

chip

-40~+85

˚C

chip--on-tape/storrage

0~40

˚C

chip-on--tape/transpo ortation

-20~+65

˚C

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